Professor Haneman has an international reputation for his work on the structure and electronic properties of semiconductor surfaces. He pioneered photoemission and LEED measurements on surfaces cleaved in UHV, and developed the well-known "buckled surface" model for the reconstructed atomic arrangement of Ge and Si surfaces. He pioneered the application of EPR to surfaces of semiconductors; made the first experimental determination of the surface electron wave functions and hence determined the correct surface structure of A1Sb and Ga As; made substantial contributions to the theory of the photo-electrochemical cell; and discovered the phenomenon of field-enhanced conductivity in amorphous silicon super lattices.
